| PART |
Description |
Maker |
| ASI10669 UHBS15-2 ASI10541 ASI10564 ASI10606 ASI10 |
NPN Silicon RF Power Transistor(Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:2.0A,Vcbo: 55 V,Vceo: 28 V,Vces: 55V,Vebo: 4.0 V)) UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
|
| IRG4PH50S |
1200V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=1.47V, @Vge=15V, Ic=33A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V Vce(on)typ.=1.47V @Vge=15V Ic=33A)
|
IRF[International Rectifier]
|
| RGBC40M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V/ @Vge=15V/ Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24A)
|
IRF[International Rectifier]
|
| IRGP440U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=22A)
|
IRF[International Rectifier]
|
| IRGP430U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
|
IRF[International Rectifier]
|
| IRGBC30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=14A)
|
IRF[International Rectifier]
|
| IRGBC30M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
| IRGPC40 IRGPC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| IRGPF50F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)
|
International Rectifier
IRF
|
| IRGPH50M |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V @Vge=15V Ic=23A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
|
http://
IRF[International Rectifier]
|
| IRGPH40F IRGPH40 |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
|
IRF[International Rectifier]
|
